Winbond was established in September 1987 and listed on Taiwan Stock Exchange in 1995, and is headquartered in Central Taiwan Science Park, Taichung, Taiwan. Winbond's 12-inch fabs, which are the factories with high levels of intelligent technology and automation, are located in Taichung and   Kaohsiung Science Park.

Winbond is a Specialty memory IC company. From product design, research and development, and wafer fabrication to the marketing of brand name products, Winbond endeavors to provide its global clientele with total memory solutions. Winbond's major product lines include Code Storage Flash Memory, TrustME® Secure Flash,Specialty DRAM and Mobile DRAM. The Company is the only one in Taiwan with the ability to develop DRAM and FLASH products in-house.

Our advantages of technological autonomy and prudent capacity strategies enable us to build a highly flexible production system and create synergy among product lines, which allows us to meet the diverse demands of customers while building our brand image. Winbond’s products are used extensively in handheld devices, consumer electronics, and computer peripherals. We also focus on high-barrier, high-quality applications, such automotive and industrial electronics.

Winbond has set up operations and distributor networks in the USA, Japan, China, Hong Kong , Israel ,and Germany to serve clients better and expand the depth and breadth of product sales. With regard to quality, Winbond pursues excellence and zero defects, and is certified in a number of quality and environmental safety management systems. It is also the first memory manufacturer in Taiwan to obtain the ISO 26262 certification, which is the highest standard for automotive functional safety.

Winbond also always adheres to high standards of corporate governance; we have been evaluated by the Taiwan Stock Exchange as one of the top 20% listed corporate governance.

Winbond will continue to provide customer-oriented services. Furthermore, by leveraging the strength of our advanced semiconductor design and manufacturing know-how, observing the core values of "accountability, innovation and synergy" and incorporating the corporate spirit of "execution, innovation and passion" in all operational activities, Winbond will strive towards the goal of becoming a hidden champion in providing sustainable semiconductors technology to enrich human life.

SpiFlash® Memories with SPI, Dual-SPI, Quad-SPI and QPI

Winbond's W25X and W25Q SpiFlash® Multi-I/O Memories feature the popular Serial Peripheral Interface (SPI), densities from 512K-bit to 512M-bit, small erasable sectors and the industry's highest performance.

The W25X family supports Dual-SPI, effectively doubling standard SPI clock rates. The W25Q family is a "superset" of the 25X family with Dual-I/O and Quad-I/O SPI for even higher performance. Clock rates up to 104MHz achieve an equivalent of 416MHz (50M-Byte/S transfer rate) when using Quad-SPI. This is more than four times the performance of ordinary Serial Flash (50MHz) and even surpasses asynchronous Parallel Flash memories while using fewer pins and less space.

Faster transfer rates mean controllers can execute code with Execute in Place methods (XIP) directly from the SPI interface or further improve boot time when shadowing code to RAM.

Some SpiFlash® devices offer the new Quad Peripheral Interface (QPI) supporting true Quad Commands for improved XIP performance and simpler controller circuitry. Additionally, new ultra-small form factor packages are ideal for space constrained mobile and handheld applications.

Industry Standard Compatible SLC NAND Flash Family

Winbond is offering a family of industry standard SLC NAND Flash memories to service the lower density code storage SLC NAND segment in the 1Gb to 8Gb density range. SLC NAND flash products are a direct drop-in replacement to equivalent products in the industry from different suppliers are fully compatible.

The command set, the interface and the packages are the same as what other suppliers provide. Winbond's feature set is a superset of the features that other suppliers offer.

Winbond Electronics Corporation is a leading supplier of semiconductor solutions to the consumer, computer, communications, and electronics product markets. Winbond developed the mobile DRAM devices with a low IDD current value, which helps Winbond to extend mobile DRAM memory applications beyond the mobile phone and tablet market to areas of mobile consumer electronics and mobile communication. Winbond mobile DRAM devices support both x16 and x32 data widths. Major features for the families of products shown in the table below include the following: Sequential or Interleave burst、High Clock rate、Standard Self Refresh、Partial-Array Self Refresh (PASR)、Automatic Temperature Compensated Self Refresh Rate(ATCSR)、Deep Power-Down (DPD)、and Programmable output buffer driver strength. Please refer to the datasheets for specific features. They are ideal for portable multimedia players, wearable devices, automotive applications, consumer electronics, gaming devices, and mobile devices.

Product Category

Winbond’s DRAM product portfolio is consisting of Mobile RAM and Specialty DRAM. Specialty DRAM, focusing on low and middle density, features characteristics of high performance and high speed and is widely used by leaders in the consumer, communication, computer peripheral, industrial, and automobile markets. Completed solution can be provided to variety customers. SDR, DDR, DDR2, and DDR3 support for Industrial and automotive application with AEC-Q100, TS16949, ISO9001/14001, OHSAS18001 certificates. Winbond provides professional advices to KGD customers, including SiP package bonding & power/thermal, DRAM simulation, wafer level on speed test…etc.

Product Category

Modern IoT devices rely on dedicated computer memory units to function. Random-access memory (RAM) units enable critical functions in these IoT devices and have evolved with an increasing need for compactness and functionality.

What Constitutes RAM?

Computer RAM can either be static random-access memory (SRAM) or dynamic random-access memory (DRAM). Each of these computer memory configurations plays a unique role in modern IoT devices and wearable tech.

SRAM vs. DRAM

Both SRAM and DRAM represent volatile forms of computing that are prone to loss of memory when the power source is interrupted. SRAM units temporarily store data by utilizing six-transistor memory cells, are faster, more efficient (require less power to operate than DRAMs), permit data remanence, and are generally costlier.

By contrast, DRAM works by combining a metal-oxide-semiconductor field-effect transistor (MOSFET) and a metal-oxide-semiconductor (MOS) capacitor to achieve temporary data storage. DRAM chips are cheaper but require a constant refresh from an external source to retain the data on their capacitors.

What Is Pseudo-Static RAM and What Makes It Unique?

Pseudo-static random-access memory (PSRAM or PSDRAM) chips combine the best features of both SRAM and DRAM computing units. PSRAM is a DRAM device that integrates a refresh feature, negating the need for an externally enabled data rewrite onto its MOS capacitor. These features make PSRAMs excellent for main memory applications in numerous wearable IoT devices and portable smart devices.

Winbond Offers Sophisticated PSRAM Solutions for Wearable Tech

Winbond's PSRAM solution offers low-profile, low-power performance ideal for IoT wearable devices. Pseudo SRAM (PSRAM) is experiencing a design revival with wearable devices. Also known as CellularRAM, PSRAM were widely used in feature mobile phones. A typical IoT wearable design requires low power for extended battery life and uses lower RAM density in the smallest possible packages. Most wearable is tasked to monitor a finite set of parameters which means not a lot of computing power or the need for large memory size. These design requirements make PSRAM a natural choice. Winbond offers a variety of PSRAM densities from 32 Mb to 256 Mb in BGA packages.

Winbond’s PSRAM Product Features

• Broad density offering from 32 Mb to 256 Mb

• Operating voltage range: 1.7V to 1.9V

• Memory organization: x16

• 133 MHz Clock Rate

• 70 ns Random Access Time

• Option for Address Data Multiplex (ADM) to take advantage of less pins or Address Data Parallel (ADP)

• Standard 54 BGA for all densities, 49 BGA for 64 Mb only

These 1.8V low power devices include a deep, power down sleep mode which help to extend the IoT device’s battery life. Additional features that support less overall power consumption include partial-array self-refresh and configurable drive strengths of ½ and ¼ strength.

Winbond HYPERRAM™ products provide a compact alternative to traditional pseudo-SRAM in IoT and consumer devices, automotive and industrial equipment. The introduction in 2021 of HYPERRAM™ devices produced on Winbond’s 25nm process extends densities up to 256Mb and 512Mb. For package type, HYPERRAM supports 24BGA, WLCSP and KGD.

Ultra-low Power Consumption:
Winbond’s Hybrid Sleep Mode (HSM) gives standby power consumption as low as 35μW, and operating power less than half that of equivalent pSRAM products.
Design Simplicity:
HYPERRAM™ devices use just 13 signal pins, compared to 31 signal pins in pSRAM. This makes the board layout much simpler to design and manufacture.
Space-saving:
Low pin-count packages and a lower number of connections to the host controller reduce the memory system’s board footprint and save space in consumer devices such as smart watches.