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PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPWEB TECHNOLOGYCAPACITYCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPMT35XU512ABA1G12-0SIT1COMPONENTNOXccela Flash512Mb512Mb200MHz400MTPS1.8V-40C to +...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEPROTOCOLOPERATING TEMPPIN COUNTMT29VZZZBD81SLSL-046 W.22D1COMPONENTNO560GbNSRNSR1.1VUFS2.2-25C to +85C254-ballMT30AZZ...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSMODULE VERSIONPART TYPEPLPDENSITYMODULE DENSITYCOMPONENT DENSITYSPEEDINDUSTRY SPEEDMT/SMTA8ATF1G64AZ-3G2E18UDIMMMODULENO8GB8GB8GB1600MHzPC4-32003200MTPSMTC4C10163S1UC...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCAPACITYCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPMT25TL512BBA8ESF-0AAT2COMPONENTNO512Mb512Mb133MHz160MTPS3V-40C to +105CMT25TL01GHBB8E12-0AAT2CO...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPWEB TECHNOLOGYCAPACITYCOMPONENT DENSITYI/O VOLTAGEOPERATING TEMPBUS WIDTHMT29F512G08EBHAFB17A3WC1-F1DIENO3D NAND512Gb512Gb1.2V0C to +70Cx8MT29F256G08EBHBF...
2024-09-29
PART NUMBERPART TYPEPLPCAPACITYI/O VOLTAGEOPERATING TEMPBUS WIDTHPIN COUNTPART STATUS CODECOMPONENT CONFIGMT29F8G08ADAFAWP-AAT:FCOMPONENTNO8Gb3.3V-40C to +105Cx848-pinContact Factory1G x8MT29F2G08A...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCAPACITYCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPBUS WIDTHPART STATUS CODECOMPONENT CONFIGMT25QU512ABB8ESF-0SIT1COMPONENTNO512Mb512Mb166MHz166MT...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPBUS WIDTHCAS LATENCYPIN COUNTMT48LC16M16A2B4-6A:G1COMPONENTNO256Mb166MHz332MTPS3.3V0C to +70Cx16CL = 35...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSMODULE VERSIONPART TYPEPLPDENSITYMODULE DENSITYCOMPONENT DENSITYSPEEDINDUSTRY SPEEDMT/SMTA36ASF4G72PZ-2G6E136RDIMMMODULENO32GB32GB32GB1333MHzPC4-26662666MTPSMTC20F208...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCAPACITYCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPBUS WIDTHPIN COUNTMT29F8T08GULDHD5-M:D8COMPONENTNO8Tb8TbNSRMHzNSRMTPS1.2V70Cx8154-ballMT29F1T08...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCAPACITYCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPBUS WIDTHMT28EW256ABA1LPC-0SIT1COMPONENTYES256Mb256MbNSRMHzNSRMTPS3V-40C to +85Cx16MT28EW512ABA...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPPIN COUNTMT29GZ5A5BPGGA-046AAT.87J1COMPONENTNO8Gb2133MHz4266MTPS1.8V-40C to +105C149-ballMT29C4G48MAZBB...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSMODULE VERSIONPART TYPEPLPDENSITYMODULE DENSITYCOMPONENT DENSITYMT/SMTC40F2047S1HC88XB140MRDIMMMODULENO128GB128GB128GB8800MTPSMTC40F204WS1HC88XC140MRDIMMMODULENO96GB9...
2024-09-29
PART NUMBERPART TYPEPLPCAPACITYI/O VOLTAGEOPERATING TEMPBUS WIDTHPART STATUS CODECOMPONENT CONFIGMT29F32G08CBACAL73A3WC1LDIENO32Gb3.3V0C to +70Cx8Contact Factory4G x8MT29F512G08CMCEBJ4-37ITR:ECOMPO...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSMODULE VERSIONPART TYPEPLPDENSITYMODULE DENSITYCOMPONENT DENSITYSPEEDINDUSTRY SPEEDMT/SMTA72ASS8G72LZ-3G2R272LRDIMMMODULENO64GB64GB64GB1600MHzPC4-32003200MTPSMTA36ASF...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPBUS WIDTHCAS LATENCYPIN COUNTMT62F768M64D4EK-023 FAAT:B4COMPONENTNO48Gb4266MHz8533MTPS0.5V-40C to +105C...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPBUS WIDTHCAS LATENCYPIN COUNTMT62F3G32D8DV-026 AAT:B8COMPONENTNO98Gb3750MHz7500MTPS0.5V-40C to +105Cx32...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPBUS WIDTHCAS LATENCYPIN COUNTMT53E1536M64D8HJ-046 AIT:B8COMPONENTNO96Gb2133MHz4266MTPS1.1V-40C to +95Cx...
2024-09-29
PART NUMBERPART TYPECOMPONENT DENSITYMT/SI/O VOLTAGEBUS WIDTHPIN COUNTMT68A512M32DF-32:ACOMPONENT16Gb32GTPS1.2Vx32266-ballMT68A512M32DF-28:ACOMPONENT16Gb28GTPS1.2Vx32266-ball
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPBUS WIDTHPIN COUNTMT61K512M32KPA-24:U2COMPONENTNO16Gb3GHz24GTPS1.35V95Cx32180-ballMT61K512M32KPA-21:U2C...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPBUS WIDTHPIN COUNTMT61K512M32KPA-16:C2COMPONENTNO16Gb2GHz16GTPS1.35V0C to +95Cx32180-ballMT61K512M32KPA...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPPIN COUNTMT29GZ6A6BPIET-046IT.1121COMPONENTNO16Gb2133MHz4266MTPS1.8V-40C to +85C149-ballMT29VZZZCD9GUKP...
2024-09-29
PART NUMBERPART TYPEPLPCAPACITYI/O VOLTAGEPROTOCOLOPERATING TEMPPIN COUNTMTFC256GBCAQTC-AATCOMPONENTNO256GB1.8VMMC5.1-40C to +105C153-ballMTFC32GBCAQTC-AATCOMPONENTNO32GB1.2V-40C to +105C153-ballMT...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPBUS WIDTHCAS LATENCYPIN COUNTMT46V16M16CY-5B IT:M1COMPONENTNO256Mb200MHz400MTPS2.5V-40C to +85Cx16CL = ...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPBUS WIDTHCAS LATENCYPIN COUNTMT40A2G4SA-062E:R1COMPONENTNO8Gb1600MHz3200MTPS1.2V0C to +95Cx4CL = 2278-b...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPBUS WIDTHCAS LATENCYPIN COUNTMT41K64M16TW-107 AAT:J1COMPONENTYES1Gb933MHz1866MTPS1.35V-40C to +105Cx16C...
2024-09-29
PART NUMBERNUMBER OF COMPONENTSPART TYPEPLPCOMPONENT DENSITYSPEEDMT/SI/O VOLTAGEOPERATING TEMPBUS WIDTHCAS LATENCYPIN COUNTPART STATUS CODECOMPONENT CONFIGPACKAGEMT47H64M16NF-25E IT:M1COMPONENTNO1G...
2024-09-29
In recent years, we have seen considerable growth in artificial intelligence(AI) models for natural language processing (NLP), largely due to theremarkable performance of large language models (LLM...
2024-08-31
Micron HBM3E 8-high 24GB will ship in NVIDIA H200 Tensor Core GPUs starting in the second calendar quarter 2024. Micron HBM3E 12-high 36GB samples are available now.
2024-08-31
Micron’s HBM3E 8-high 24GB and HBM3E 12-high 36GB deliver industry-leading performance with bandwidth greater than 1.2 TB/s and consume 30% less power than any other competitor in the market.
2024-08-31
Part No.Memory ConfigurationDensityDensity unitSTR Frequency (MHz)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitInterface TypeW25M321AVEIT32Mb NOR+1Gb NAND1Gb104-4085SON88X6...
2024-08-23
Part No.DensityDensity unitTemp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitI/OInterface TypeW29N01HVBANA1Gb-40105VFBGA639X11MM^28bitONFIW29N01HVBANF1Gb-40105VFBGA639X11MM^28bi...
2024-08-23
Part No.DensityDensity unitSTR Frequency (MHz)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitInterface TypeW25H01JVSFAM1Gb133-40105SOP16300MILSPI/Dual/QuadW25H01JVSFSM1Gb133-...
2024-08-23
Part No.DensityDensity unitFrequency (Mbps)Voltage (V)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitI/OW9812G2KB-6128Mb1663.3070TFBGA908X13MM^232bitW9812G2KB-6I128Mb1663.3-4...
2024-08-23
Part No.DensityDensity unitSTR Frequency (MHz)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitInterface TypeW25M02GVSFAG2Gb104-40105SOP16300MILSPI/Dual/QuadW25M02GVSFAT2Gb104-...
2024-08-23
Part No.DensityDensity unitSTR Frequency (MHz)DTR Frequency (MHz)Voltage (min) (V)Voltage (max) (V)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitInterface TypeW35N01JWTBAG1G...
2024-08-23
Part No.DensityDensity unitSTR Frequency (MHz)DTR Frequency (MHz)Voltage (min) (V)Voltage (max) (V)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitInterface TypeW35T01NWTBAE1G...
2024-08-23
Part No.DensityDensity unitFrequency (Mbps)Voltage (V)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitI/OW987D2HBJX6E128Mb1661.8/1.8-2585VFBGA908X13MM^232bitW987D2HBJX6I128Mb1...
2024-08-23
Part No.DensityDensity unitFrequency (Mbps)Voltage (V)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitI/OW66AP6NBHAFA1Gb32001.8/1.1/1.1-4095VFBGA10010X7.5MM^216bitW66AP6NBHAFI...
2024-08-23
Part No.DensityDensity unitFrequency (Mbps)Voltage (V)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitI/OW63AH2NBVABE1Gb16001.8/1.2/1.2-2585VFBGA17811X11.5MM^232bitW63AH2NBVAB...
2024-08-23
Part No.DensityDensity unitFrequency (Mbps)Voltage (V)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitI/OW978H2KBVA1A10661.8/1.2/1.2W978H2KBVA1K256Mb10661.8/1.2/1.2-40105VFBGA...
2024-08-23
Part No.DensityDensity unitFrequency (Mbps)Voltage (V)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitI/OW947D2HBJX5E128Mb4001.8/1.8-2585VFBGA908X13MM^232bitW947D2HBJX5I128Mb4...
2024-08-23
Part No.DensityDensity unitFrequency (Mbps)Voltage (V)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitI/OW955K8MBYA5A32Mb4001.8/1.8-4085TFBGA (5X5)246X8MM^28bitW955K8MBYA5I32M...
2024-08-23
Part No.DensityDensity unitFrequency (Mbps)Voltage (V)Package TypePINDimensionDimension unitI/OW664GG6RB-064Gb32001.2VFBGA967.5X13MM^216bitW664GG6RB-074Gb26661.2VFBGA967.5X13MM^216bitW664GG6RB-084G...
2024-08-23
Part No.DensityDensity unitFrequency (Mbps)Voltage (V)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitI/OW631GG6MB09A1Gb21331.5-4095VFBGA967.5X13MM^216bitW631GG6MB09K21331.5VF...
2024-08-23
Part No.DensityDensity unitFrequency (Mbps)Voltage (V)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitI/OW9712G6KB-25128Mb8001.8095TFBGA848X12.5MM^216bitW9712G6KB-3128Mb6671.8...
2024-08-23
Part No.DensityDensity unitFrequency (Mbps)Voltage (V)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitW9412G6JH-5K4002.5W9412G6KH-5128Mb4002.5070TSOPII66400MILW9412G6KH-5A128M...
2024-08-23
Part No.DensityDensity unitSTR Frequency (MHz)Voltage (min) (V)Voltage (max) (V)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitW25R01JVZHIQ1Gb1332.73.6-4085SON88X6MM^2W25R01N...
2024-08-23
Part No.DensityDensity unitSTR Frequency (MHz)Voltage (min) (V)Voltage (max) (V)Temp. (min) (⁰C)Temp. (max) (⁰C)Package TypePINDimensionDimension unitInterface TypeW25Q12NEBYIG128Mb1041.141.26-4085...
2024-08-23
eMCP LPDDR4XProduct NameDRAM DensityFlash DensityConfigSpeedPackageGradeTemperatureAvailabilityNE4888KAPAXAI-MF8Gb8GBytesx324267Mbps254-ball BGACommercial-25C~85CMPNE4888KAPAXAI-ME8Gb8GBytesx323733...
2024-08-23
eMCP LPDDR3Product NameDRAM DensityFlash DensityConfigSpeedPackageGradeTemperatureAvailabilityNE1888KALAXA7-MD8Gb8GBytesx321866Mbps221-ball BGACommercial-25C~85CMPNE1888KALAXA7-MG8Gb8GBytesx322133M...
2024-08-23
MCP LPDDR4XProduct NameDRAM DensityFlash DensityConfigSpeedPackageGradeTemperatureAvailabilityNM4484NSPAXAE-3E4Gb4Gbitsx163733Mbps149-ball BGACommercial-25C~85CMPNM4484NSPAXAE-3EE4Gb4Gbitsx163733Mb...
2024-08-23
MCP LPDDR2Product NameDRAM DensityFlash DensityConfigSpeedPackageGradeTemperatureAvailabilityNM1482KMLAXAL-3BI2Gb4Gbitsx321066Mbps162-ball BGAIndustrial-40C~105CMPNM1181NSLAXAJ-3BE1Gb1Gbitsx161066M...
2024-08-23
Product NameDRAM DensityConfigSpeedPackageGradeTemperatureAvailabilityNT6AP256T32AV-J18Gbx324267Mbps200-ball BGACommercial-30C~105CMPNT6AP256T32AV-J28Gbx323733Mbps200-ball BGACommercial-30C~105CMPN...
2024-08-23
Product NameDRAM DensityConfigSpeedPackageGradeTemperatureAvailabilityNT6AN256T32AV-J18Gbx324267Mbps200-ball BGACommercial-30C~105CMPNT6AN256T32AV-J28Gbx323733Mbps200-ball BGACommercial-30C~105CMPN...
2024-08-23
Product NameDRAM DensityConfigSpeedPackageGradeTemperatureAvailabilityNT6CL256M32AM-H18Gbx321866Mbps178-ball BGACommercial-30C~105CMPNT6CL256M32AM-H08Gbx322133Mbps178-ball BGACommercial-30C~105CMPN...
2024-08-23
DRAM DensityConfigSpeedPackageGradeTemperatureAvailabilityNT6TL64T32BA-G0H2Gbx321066Mbps134-ball BGAAutomotive-40C~105CMPNT6TL128T64BR-G0I8Gbx641066Mbps216-ball PoPIndustrial-40C~85CMPNT6TL256T32BQ...
2024-08-23
Product NameDRAM DensityConfigVoltageSpeedPackageGradeTemperatureAvailabilityNT5AD512M16C4-HR8Gbx161.2V2666Mbps96-ball BGACommercial0C~95CMPNT5AD512M16C4-JR8Gbx161.2V3200Mbps96-ball BGACommercial0C...
2024-08-23
Product NameDRAM DensityConfigVoltageSpeedPackageGradeTemperatureAvailabilityNT5CB256M8JQ-DI2Gbx81.5V1600Mbps78-ball BGACommercial0C~95CMPNT5CB256M8JQ-FL2Gbx81.5V2133Mbps78-ball BGACommercial0C~95C...
2024-08-23
DRAM DensityConfigVoltageSpeedPackageGradeTemperatureAvailabilityNT5TU128M8HE-BE1Gbx81.8V1066Mbps60-ball BGACommercial0C~95CMPNT5TU128M8HE-AC1Gbx81.8V800Mbps60-ball BGACommercial0C~95CMPNT5TU64M16H...
2024-08-23
At FMS 2024, Phison devoted significant booth space to their enterprise / datacenter SSD and PCIe retimer solutions, in addition to their consumer products. As a controller / silicon vendor, Phison...
2024-08-20
The CXL consortium has had a regular presence at FMS (which rechristened itself from 'Flash Memory Summit' to the 'Future of Memory and Storage' this year). Back at FMS 2022, the company had announ...
2024-08-20
When Western Digital introduced its Ultrastar DC SN861 SSDs earlier this year, the company did not disclose which controller it used for these drives, which made many observers presume that WD was ...
2024-08-20
2024-07-10
2024-07-10
2024-07-10
Memory innovator Netsol has announced a major leap in the memory technology with the development of a Flash-like MRAM.Following the successful release of STT-MRAM products earlier last year and suc...
2024-05-07
Netsol Unveils First Standalone MRAM Using 28nm Process, Shares the Outlook for Standalone MRAM at 2
At the 2023 MRAM Forum, a key event by the IEEE Magnetics Society tied to the IEDM conference, Mr. Noh, Chief Technology Officer at Netsol, provided an overview of the company's advancements in MRA...
2024-05-07
深圳市晶存科技有限公司是一家集设计、研发、封装、测试和销售于一体的存储芯片高新技术企业 公司拥有18年以上行业经验的核心团队，始终聚焦存储芯片产品致力于为客户提供高性价比的存储芯片以及存储解决方案，立志为中国存储产业发展做出杰出的贡献。 晶存自研工规级闪存控制器芯片，基于该芯片的eMMC模组产品已实现千万级的出货 控制器芯片及固件技术、模组芯片及量产封装测试技术得到了业内...
2024-04-26
We offer FPGAs Leadership Across Multiple Process Nodes | CPLDs offer High Performance and Ultra-low Power Consumption.Whether you are designing a state-of-the art, high-performance networking appl...
2024-04-23
8GB? 16GB? 32GB? 64GB? 128GB?!! We just can’t seem to get enough. With better cameras and displays – which mean more selfies, bigger pictures and more videos – memory has been a growing priority wh...
2024-03-29
DDR5 is short for “DDR-SDRAM 5” which means “Double Data Rate Synchronous Dynamic Random Access Memory generation 5”. It’s the fifth iteration of a RAM technology that uses both rising and descendi...
2024-03-29
LPDDR (Low Power Double Data Rate) RAM is a type of mobile DRAM (dynamic random-access memory) that is commonly used in smartphones, tablets, and other mobile devices. It is designed to be power-ef...
2024-03-29
ContentsRAM Flash memoryFor a smartphone, any component can affect the overall performance and experience of the phone, processor, memory, flash, screen, and more. However, for the novice users who...
2024-03-29
1. NAND FlashThe full name of NAND Flash is Flash Memory, which belongs to a non-volatile memory device (Non-volatile Memory Device). It is based on a floating gate transistor design, and charges a...
2024-03-29
Macronix offers an extensive line of 5V and 3V industry-standard Parallel NOR Flash memory products from 2Mb to 1Gb densities. These products feature Boot and Uniform Sector architectures in x8, x1...
2024-03-20
Macronix SLC NAND Flash complements its world-leading Serial and Parallel NOR Flash offerings. Our rigorous quality management system ensures that Macronix SLC NAND is one of the most robust and re...
2024-03-20
As embedded systems evolve, there are many applications with a Serial Peripheral Interface (SPI) that require higher-density memory solutions to store large image files. Recognizing such applicatio...
2024-03-20
Macronix designs and manufactures 3V, 2.5V and 1.8V Serial NOR Flash products from 512Kb to 2Gb. We also offer backward-compatible, high-performance Serial NOR Flash, MXSMIO® (Multi-I/O) family and...
2024-03-20
RAW SLC NAND Flash Memory for OEM & IndustrialSLC: A Reliable, High-Performing ChoiceA 1-bit per cell, non-volatile memory, KIOXIA SLC (single-level cell) NAND flash memory writes large amounts of ...
2024-03-20
Serial Interface NAND Flash Memory for OEM & IndustrialSerial Interface NAND Flash Memory: A High-Speed SPI Alternative to NOR Flash MemoryKIOXIA Serial Interface NAND flash memory features a seria...
2024-03-20
Consumer Grade e-MMC SpecsCapacityPart Numbere-MMC VersionMax Data Rate(MB/s)Supply VoltageOperating Temperature(℃)Package Size(mm)VCC (V)VCCQ (V)4GBTHGBMNG5D1LBAIT5.04002.7 to 3.61.70 to 1.95,2.7 ...
2024-03-20
UFS 4.0 SpecsCapacityPart NumberUFSVersionMax DataRate(MB/s)Supply VoltageOperatingTemperature(℃)Package Size(mm)VCC(V)VCCQ(V)VCCQ2(V)128GBTHGJFJT0E25BAIP4.046402.4 to 2.71.14 to 1.26- (1)-25 to 85...
2024-03-20
CapacityPart NumberUFSVersionMax DataRate(MB/s)Supply VoltageOperatingTemperature(℃)Package Size(mm)VCC(V)VCCQ(V)VCCQ2(V)32GBTHGAF8G8T23BAIL2.111602.7 to 3.6- (1)1.70 to 1.95-25 to 8511.5x13.0x0.86...
2024-03-20
Rayson Technology Ltd.RAYSON HI-TECH(SZ) LIMITED was founded in 2016. It is a high-tech enterprise of memory chip integrated with design, research & development, package, testing and marketing.Head...
2024-03-19
RaysonDDR4Package：FBGA 96bDensity：2Gbit~8GbitOperating Temperature Range：0~85℃Speed：2400Mbps/2667MbpsVoltage：1.2VApproved Verification Platform：MTK、Spreadtrum、Rockchip、Amlogic● Speed up to 2667Mbps...
2024-03-19
RaysonDDR3Package：FBGA 96bDensity：128*16/256*16/512*16Operating Temperature Range：0~85℃Speed：1866MbpsVoltage：1.35 / 1.5 VApproved Verification Platform：MTK、Spreadtrum、Rockchip、Amlogic● Higher exter...
2024-03-19
RaysonLPDDR4/4XPackage：FBGA 200bDensity：4Gbit~64GbitOperating Temperature Range：-25~85℃Speed：2667Mbps/3200Mbps/3733MbpsVoltage：VDD1/VDD2/VDDQ= 1.8 / 1.1 / 1.1 V（LPDDR4）VDD1/VDD2/VDDQ = 1.8 / 1.1 / ...
2024-03-19
MT40A8G4CLU-062H:Edownload32Gb95CTFBGADDR4 SDRAMMT40A2G4SA-062E:Rdownload8Gb0C to +95CTFBGADDR4 SDRAMMT40A4G4VA-062E:Bdownload16Gb0C to +95CTFBGADDR4 SDRAMMT40A1G8SA-062E AAT:Edownload8Gb-40C to +1...
2024-03-19
MT62F3G32D8DV-026 AAT:Bdownload98Gb3750MHz-40C to +105C3G X32LFBGALPDDR5MT62F1G32D2DS-020 WT:Cdownload32Gb4800MHz-25C to +85C1G X32TFBGALPDDR5MT62F512M64D4EK-031 IT:Bdownload32Gb3200MHz-40C to +95C...
2024-03-19
Part No.NAND ModeDRAM ModeNAND DensityDRAM DensityProduct StatusH9HP52AECMMDAR-KMMeMMC5.1LPDDR4X64GB6GBMPH9HP53AECMMDAR-KMMeMMC5.1LPDDR4X64GB6GBMPH9AG9G5ANBX100eMMC5.1LPDDR4X64GB4GBMPH9HP52ACPMADAR...
2024-03-19
Part No.NAND ModeDRAM ModeNAND DensityDRAM DensityProduct StatusH9HQ54AECMMDAR-KEMUFS2.2LPDDR4X64GB6GBMPH9HQ54ACPMMDAR-KEMUFS2.2LPDDR4X64GB4GBMPH9HQ54ADKMMDAR-KEMUFS2.2LPDDR4X64GB3GBCSH9HQ53AECMMDA...
2024-03-19
table for product spec finderPart No.Model NameDensityProduct GradeTemperatureVoltage(VCC/VCCQ)PKG TypeProduct StatusH26M78208CMRNEE510A64GBCT-25~85C3.3V / 1.8VFBGAMPH26M78208CMRIEE510A64GBIT-40~85...
2024-03-19
Part No.Model NameDensityMono-DensityPKG SizePKG TypeSpecVoltage(VCC/VCCQ)Product StatusHN8T25BZGKX017NUC310512GB512Gb11.5x13x1.0mmFBGAUFS 3.12.5V / 1.2VMPHN8T15BZGKX016NUC310256GB512Gb11.5x13x1.0m...
2024-03-19
Part No.DensityVoltage (VDD1 / VDD2 / VDDQ)SpeedPackageProduct StatusH9HCNNNFAMMLXR-NEI8GB1.8V / 1.1V / 0.6V4266Mbps200BallMPH9HCNNNFAMMLXR-NEE8GB1.8V / 1.1V / 0.6V4266Mbps200BallMPH9HCNNNCPMMLXR-N...
2024-03-19
Part No.DensityVoltage (VDD1 / VDD2 / VDDQ)SpeedPackageProduct StatusH58G66MK6BX0268GB1.8V / 1.05V / 0.5V6400Mbps441BallCSH9JCNNNCP3MLYR-N6E4GB1.8V / 1.05V / 0.5V6400Mbps315BallCSH58G56AK6JX0324GB1...
2024-03-19
Part No.DensityOrganizationSpeedPackageProduct StatusH5TQ4G63EFR-TEN4Gbx162133MbpsFBGAMPH5TC4G63EFR-TEN4Gbx162133MbpsFBGAMPH5TC4G63EFR-RDN4Gbx161866MbpsFBGAMPH5TQ4G63EFR-RDN4Gbx161866MbpsFBGAMPH5TQ...
2024-03-19
Part No.DensityOrganizationSpeedPackageProduct StatusH5ANBG6NAMR-XNC32Gbx163200MbpsFBGAMPH5ANBG8NABR-XNC32Gbx83200MbpsFBGAMPH5ANAG6NCJR-XNC16Gbx163200MbpsFCBGAMPH5ANAG6NCMR-XNI16Gbx163200MbpsFBGAMP...
2024-03-19
Part No.DensityOrganizationSpeedPackageProduct StatusH5ANBG6NAMR-XNC32Gbx163200MbpsFBGAMPH5ANBG6NAMR-WMC32Gbx162933MbpsFBGAMPH5ANBG6NAMR-VKC32Gbx162666MbpsFBGAMPH5ANBG8NABR-XNC32Gbx83200MbpsFBGAMPH...
2024-03-19
KGD DRAMPieceMakers Technology is devoted to offer a variety of DRAM KGD solutions that are compliant with the JEDEC standard. We are here to help customers make System-In-Package and Multiple-Chip...
2024-03-19
GigaDevice offers Known Good Die (KGD) products in addition to the standard packaged Flash Memory products. KGD memory is the preferred option for chipset vendors to provide System-in-Package (SiP)...
2024-03-19
Part NumberVersionCapacityVoltageInterfacePackage SizeTemperatureProduct StatusKLUCG4J1ZD-C0CQKLUCG4J1ZD-C0CQUFS 2.164 GB1.8 / 3.3 VG3 2Lane11.5 x 13 x 1.2 mm-40 ~ 105 °CMass ProductionKLUBG4G1ZF-C...
2024-03-19
Part NumberVersionCapacityVoltageInterfacePackage SizeTemperatureProduct StatusKLUDG4UHGC-B0E1KLUDG4UHGC-B0E1UFS 3.1128 GB1.2 / 2.5 VG4 2Lane11 x 13 x 0.8 mm-25 ~ 85 °CMass ProductionKLUEG4RHGB-B0E...
2024-03-19
Part NumberVersionDensityVoltageInterfacePackage SizeTemperatureProduct StatusKLMCG1RCTE-B041KLMCG1RCTE-B041eMMC 5.164 GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-25 ~ 85 °CMass ProductionKLMDG2RCTE-B041K...
2024-03-19
Part NumberDensityOrganizationSpeedVoltageTemperaturePackageProduct StatusK4B4G0846E-BCNBK4B4G0846E-BCNB4 Gb512M x 82133 Mbps1.5 V0 ~ 85 °C78 FBGAMass ProductionK4B4G1646E-BCNBK4B4G1646E-BCNB4 Gb51...
2024-03-19
Part NumberDensityOrganizationSpeedVoltageTemperaturePackageProduct StatusK4A8G085WG-BCWEK4A8G085WG-BCWE8 Gb1G x 83200 Mbps1.2 V0 ~ 85 °C78 FBGAMass ProductionK4A8G165WG-BCWEK4A8G165WG-BCWE8 Gb512M...
2024-03-19
Part NumberDensityOrganizationSpeedVoltageTemperaturePackageProduct StatusK4F6E3S4HB-KFCLK4F6E3S4HB-KFCL16 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 95 °C200 FBGAMass ProductionK4F6E3S4HB-KHCLK4F6E3S4HB...
2024-03-19
Part NumberDensityOrganizationSpeedVoltageTemperaturePackageProduct StatusK4U6E3S4AB-KFCLK4U6E3S4AB-KFCL16 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-40 ~ 95 °C200 FBGAMass ProductionK4UJE3D4AA-KUCLK4UJE3D4AA...
2024-03-19
Part NumberDensityOrganizationSpeedVoltageTemperaturePackageProduct StatusK3LK4K40CM-BGCPK3LK4K40CM-BGCP96 Gbx646400 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 °C496 FBGAMass ProductionK3LKBKB0BM-MGCPK3L...
2024-03-19
Part NumberDensityOrganizationSpeedVoltageTemperaturePackageProduct StatusK3KL3L30DM-BGCUK3KL3L30DM-BGCU64 Gbx648533 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 °C496 FBGAMass ProductionK3KL4L40EM-BGCUK3K...
2024-03-19
K3KL8L80CM-MGCTPioneering premium low-power DRAMWith speeds 1.3 times faster than the previous generation and 20% better power efficiency,premium low-power DRAM LPDDR5X is going beyond mobile - lea...
2024-03-19
K3KL9L90CM-MGCTPioneering premium low-power DRAMWith speeds 1.3 times faster than the previous generation and 20% better power efficiency,premium low-power DRAM LPDDR5X is going beyond mobile - lea...
2024-03-19
Pioneering premium low-power DRAMWith speeds 1.3 times faster than the previous generation and 20% better power efficiency,premium low-power DRAM LPDDR5X is going beyond mobile - leading the low-po...
2024-03-19
On November28 2023, CXMT announced the launch of several LPDDR5 products, including 12Gb LPDDR5 dies, 6GB DSC packaging LPDDR5 mobile DRAM, and 12GB POP packaging LPDDR5 mobile DRAM. The 12GB LPDDR...
2024-03-18
Quality managementQuality Policy: To become customers’1st choice of semiconductor memory solution provider with key contribution from quality.Smart manufacturing managementCXMT has been enhancing t...
2024-03-18
LPDDR5The LPDDR5 is the fifth generation of low-power double data rate synchronous dynamic random access memory. The new product offers a single-die density of 12Gb, with a speed of 6400Mbps, repre...
2024-03-18
Solution OverviewHome Oxygen Concentrator Solution Based on GD32 MCUMost of the home oxygen generators on the market are molecular sieve oxygen generators, which are characterized by low cost, ease...
2024-03-18
Solution OverviewHigh-performance IP Camera Solution Based on GD SPI NORIn the application scenarios of IP Camera and mobile IP Camera, the demand for low power consumption and fast start up has ap...
2024-03-18
Solution OverviewThe GigaDevice lineup of fingerprint solution is optimal for PC integration, assisting device unlocking, logging in to services and apps, or verifying payments. Our biometric solut...
2024-03-18
In the automotive field, electronic components need to meet the requirements of the more stringent AEC-Q100 standard. With GD25/55 SPI NOR Flash and GD5F SPI NAND Flash being AEC-Q100 qualified, Gi...
2024-03-18
AutomotiveThe need for fast, endurant, non-volatile solutions for automotive that can meet the harsh requirements of automotive conditions has been growing. Automotive applications place severe dem...
2024-03-18
Enterprise Data Storage (RAID system)RAID (Redundant Array of Inexpensive Disks) is a data storage structure of combining two or more physical storage devices (HDDs, SSDs) into a logical unit (an a...
2024-03-18
Medical DevicesPortable ultrasound scanner detects the reflected sound waves from objects and turns them into real time images. It normally uses two memories : configuration memory and image/report...
2024-03-18
Gaming MachinesGaming machines such as a slot machine and a Pachinko machine normally use battery-backed SRAM to store runtime processing data, machine states, configuration data and critical data ...
2024-03-18
Data LoggingData Logging is a process of collecting and storing critical data over time.The data is regarding :– Events for tracking– History of usage– Environmental parameters– Status of machine– ...
2024-03-18
IndustrialIndustrial applications normally require the prevention of data loss in harsh operating environments and long data retention. It also needs to ensure the data is backed-up quickly and saf...
2024-03-18
Smart meterSmart meters provide utilities with accurate, real-time monitoring of energy. The data from smart meters is often transmitted over a variety of wireless networks. Using this real-time da...
2024-03-18
The future of mobility is coming. Thanks to our innovative portfolio of automotive semiconductor solutions, Samsung Semiconductor is uniquely positioned to collaborate with our automotive industry ...
2024-03-18
News Highlights9.6Gbps product verified to be compatible with Qualcomm’s new Snapdragon mobile processorWith validation with global major partners completed, SK hynix to provide LPDDR5T to global s...
2024-03-16
News HighlightsStarts supplying 16 GB mobile DRAM package to global smartphone makersLPDDR5T to be adopted in the latest smartphones along with MediaTek Dimensity 9300 mobile processor“Company to c...
2024-03-16
SK hynix Develops World’s Best Performing HBM3E, Provides Samples to Customer for Performance Evalua
News HighlightsProduct to drive AI tech innovation with industry’s top performance to be produced in volume from 1H24Launch of HBM3E to solidify SK hynix’s unrivaled leadership in AI memory market ...
2024-03-16
SK hynix’s executive team just got younger. As part of efforts to foster young leadership, Lee Donghun was appointed to the N-S Committee1 at the end of 2023 to become SK hynix’s youngest-ever exec...
2024-03-16
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that Qualcomm Technologies, Inc. has validated Samsung's 14-nanometer (nm) based 16-gigabit (Gb) Low P...
2024-03-16
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that its latest LPDDR5X DRAM with the industry’s fastest speed of 8.5 gigabits per second (Gbps) was v...
2024-03-16
Samsung Electronics Co. Ltd., a world leader in advanced memory technology, today announced the release of SSD 990 EVO — the newest addition to the company’s lineup of consumer SSDs — which deliver...
2024-03-16
Samsung’s PCIe 5.0 SSD will provide nearly two times faster data transfer speeds and 30% enhanced power efficiency than the previous generation, resulting in lower server operating costs*Undergoing...
2024-03-16
Micron Technology, Inc., announced two new Crucial Pro Series products with the addition of overclocking-capable memory and the world's fastest Gen 5 SSD. The Crucial DDR5 Pro Memory: Overclocking ...
2024-03-16
Micron Technology, Inc. announced it is appointing Michael Ray as the company’s senior vice president, chief legal officer and corporate secretary effective immediately.In this role, Ray will repor...
2024-03-16
Samsung Electronics announced that it has developed HBM3E 12H, the industry’s first 12-stack HBM3E DRAM and the highest-capacity HBM product to date.Samsung’s HBM3E 12H provides an all-time high ba...
2024-03-16
AI服务器浪潮席卷全球，带动AI加速芯片需求。DRAM关键性产品HBM异军突起，成为了半导体下行周期中逆势增长的风景线。业界认为，HBM是加速未来AI技术发展的关键科技之一。近期，HBM市场动静不断。先是SK海力士、美光科技存储两大厂释出2024年HBM产能售罄。与此同时，HBM技术再突破、大客户发生变动、被划进国家战略技术之一...一时间全球目光再度聚焦于HBM。1HBM：三分天下HBM（...
2024-03-07
韩国媒体 TheElec报道，三星正在考虑在其下一代 DRAM 中应用模压填充（MUF）技术。三星最近测试了一种用于 3D 堆栈 (3DS) 存储器的MUF 技术，与 TC NCF 相较其传输量有所提升。据悉，MUF 是一种在半导体上打上数千个微小的孔，然后将上下层半导体连接的硅穿孔 (TSV) 技术后，注入到半导体之间的材料，它的作用是将垂直堆栈的多个半导体牢固地固定并连接起来。而经过测试...
2024-03-07
近期，存储厂商南亚科总经理李培瑛对外表示，HBM目前产品溢价较高，确实会对存储器厂商营收有所贡献，但其占全球DRAM位元数仅约2%。因此，以当前南亚科在DRAM市场的市占率而言，现阶段不适合公司投入大量资源争夺HBM市场。存储市场正掀起AI狂欢热潮，HBM技术也从幕后走向台前，并成为推动存储器产业发展的强劲动能。不过，HBM技术含量高、在DRAM占比小，因此决定了该技术是属于三星、SK海力士...
2024-03-07
我们先从一片完整的晶圆（Wafer）说起：一块完整的wafer名词解释：wafer 即为图片所示的晶圆，由纯硅（Si）构成。一般分为6英寸、8英寸、12英寸规格不等，晶片就是基于这个wafer上生产出来的。Wafer上的一个小块，就是一个晶片晶圆体，学名die，封装后就成为一个颗粒。一片载有Nand Flash晶圆的wafer，wafer首先经过切割，然后测试，将完好的、稳定的、足容量的di...
2024-03-01
定义：中文名为绝缘栅双极型晶体管，是由BJT(双极型三极管)和MOS(绝缘栅型场效应管)组成的复合全控型电压驱动式功率半导体器件,结合了MOSFET的高电流单栅控制特性和BJT的低饱和电压能力。IGBT按封装划分可以分为单管分立器件、IGBT模块和IPM。通常市场上讲的IGBT指的是IGBT模块。特点：IGBT是能源转换与传输的核心器件，是电力电子装置的“CPU”，具有高压、大电流、高速三大...
2024-03-01
日常选机大家往往关注64GB、128GB等存储空间，却很少像选笔记本关注SSD一样关注手机闪存规格。首先手机储存容量、固态硬盘（SSD）、U盘和SD卡等使用的都是一种叫做NAND的储存介质，NAND闪存是一种非易失性存储技术，即断电后仍能保存数据。它的发展目标就是降低每比特存储成本、提高存储容量。 无论是eMMC还是UFS都是在NAND存储芯片的基础上，再加上了控制芯片，接入标准接口，进行...
2024-03-01
一、NAND FlashNAND Flash全名为Flash Memory，属于非易失性存储设备(Non-volatile Memory Device)，基于浮栅(Floating Gate)晶体管设计，通过浮栅来锁存电荷，由于浮栅是电隔离的，所以即使在去除电压之后，到达栅极的电子也会被捕获。这就是闪存非易失性的原理所在。数据存储在这类设备中，即使断电也不会丢失。根据不同的纳米技术，NAND...
2024-03-01
LPDDR5BIWIN LPDDR5LPDDR5支持多Bank Group模式，传输速率从4266Mbps提升至6400Mbps，多组电压动态调节，功耗降低30%；高性能、低功耗、更安全可靠和多容量选择，佰维LPDDR5内存方案将有效满足中高端智能手机、平板电脑、汽车等各种智能终端对内存芯片的需求。产品规格InterfaceLPDDR5Dimension12.4×15.0mmFrequenc...
2024-01-30
BIWIN LPDDR4LPDDR4LPDDR全称是Low Power Double Data Rate SDRAM，是DDR的一种，主要以低功耗为特点。BIWIN Low Power DDR提供包括从高性能到高性价比的RAM解决方案。最新一代的LPDDR4具有比LPDDR3高50%的性能提升；同时，更低的功耗和更高的频率，让设备运行更加顺畅。产品规格InterfaceLPDDR 4 / L...
2024-01-30
eMCP随着手机所用操作系统的程序代码容量变大，特别是随着Android操作系统的广泛流行，智能型手机对存储容量的更高要求，BIWIN eMCP是基于MCP(Multi-Chip Packaging；多芯片封装技术)的产品，采用eMMC芯片加一颗低功耗的DRAM方案，有效简化了客户产品的制造过程和开发成本，缩短终端产品的研发时间，加快终端产品上市。产品规格接口eMMC+LPDDR4X尺寸11...
2024-01-30
BIWIN eMMCBIWIN eMMC凭借简练和先进的设计在短时间内进入市场，采用高性能主控芯片和稳定的NAND Flash，可在提高数据传输效率的同时，更稳定地实现更多、更快的多任务处理，可保证网页浏览、下载应用程序、高清视频回放、运行大型游戏时的流畅性。eMMC的一个明显优势是在封装中集成了一个控制器，它提供标准接口并管理闪存，使得设备厂商能专注于产品开发的其它部分，并缩短向市场推出产...
2024-01-30
康芯威-KONSEMI_国产EMMC嵌入式存储芯片合肥康芯威存储技术有限公司(以下简称“康芯威”)成立于2018年11月,主营业务为“前沿存储技术开发、方案输出、芯片设计、半导体器件分销”,产品应用于电视、机顶盒、手机、智能汽车、数据中心等领域前沿存储技术开发方案输出芯片设计生产与销售eMMC5.1：产品介绍： 支持8GB至128GB，主要应用于手机、平板电脑、电视、机顶盒、智能穿戴、...
2024-01-18
SWM34S概述- 内核：安谋科技“星辰”STAR-MC1内核，最高工作频率 150MHz- Flash: 512KB, SRAM: 64KB- SDRAM: 2MB, 8MB, 16MB- 1个RGB565接口(64Pin)，1个RGB888接口(100Pin)- JPEG硬件解码器，DMA2D- USB OTG*1, I2C*2, SPI*2, UART*4, I2S*2, CAN*2,...
2024-01-15
最近有很多客户在使用 SD NAND的时候都会问SD NAND与SPI NAND有什么区别，下面我们来一起了解下内部材质：主流SD NAND与SPI NAND基本上都是使用SLC NAND FLASH晶圆，擦写寿命可达5万-10万次；接口以及驱动程序：SD NAND正常接CPU是用SDIO接口，SPI NAND是接SPI接口使用，很多主流的CPU都是自带SDIO的驱动，因此使用SD NAND...
2024-01-15
MRAM是一种非易失性存储技术，通过磁致电阻的变化来表示二进制中的0和1，从而实现数据的存储。由于产品本身具备非易失性，让其在断电情况下依然可以保留数据信息，并拥有不逊色于DRAM内存的容量密度和使用寿命，平均能耗也远低于DRAM。被大厂看好的未来之星，非它莫属。01 三星：新里程碑目前三星仍然是全球专利*，2002年三星宣布研发MRAM，2005年三星率先研究STT-MRAM，但是此后的十...
2024-01-12
AI如何在数以百亿的小算力MCU嵌入式应用中落地？海思正在给出自己的答案。海思A²MCU聚焦行业专用（Application Specific）和嵌入式AI技术（Artificial Intelligence），将AI领域超轻量级的技术框架、极致性能的推理要求、方便快速的部署能力与MCU深度融合，为MCU行业客户探索智能化应用提供新的选择。在TCL小蓝翼P7新风空调发布会上，海思与TCL空调...
2024-01-10
在12月16日举行的2023年openEuler峰会上，上海海思推出了支持openEuler系统的A²MCU解决方案。海思表示，A²针对家电、能源、工业、汽车等领域推出，不仅涵盖基于RISC-V的系列化MCU，还包含兼容ARM指令集的高性能MPU，以及与之紧密配合并优化的操作系统。可以说，该方案的推出对日益扩大的AIoT形成了更加完备的支持。人们大多知道，华为海思有“大海思”和“小海思”之分...
2024-01-10
SD NANDSD NAND是储存卡的延伸，可直接贴片，又名贴片式TF卡、SD Flash 等，其内部集成高性能的闪存控制器，兼容 SD 协议，满足客户小型化、差异化、高可靠性的设计需求。SD NANDSD NAND是储存卡的延伸，可直接贴片，又名贴片式TF卡、SD Flash 等，其内部集成高性能的闪存控制器，兼容 SD 协议，满足客户小型化、差异化、高可靠性的设计需求。产品优势：小尺寸：...
2024-01-05
HBM竞争格局与应用市场：三巨头垄断，受益于AI服务器市场增长。据TrendForce集邦咨询研究显示，2022年三大原厂HBM市占率分别为SK 海力士（SK hynix）50%、三星（Samsung）约40%、美光（Micron）约10%。新思界预测2025E中国HBM需求量将超过100万颗。JEDEC定义三类DRAM标准：HBM属于细分图形DDR下述三种 DRAM 类别使用相同的 DRA...
2024-01-05
由于处理器与存储器的工艺、封装、需求的不同，从1980年开始至今二者之间的性能差距越来大。有数据显示，处理器和存储器的速度失配以每年50%的速率增加。存储器数据访问速度跟不上处理器的数据处理速度，数据传输就像处在一个巨大的漏斗之中，不管处理器灌进去多少，存储器都只能“细水长流”。两者之间数据交换通路窄以及由此引发的高能耗两大难题，在存储与运算之间筑起了一道“内存墙”。着数据的爆 炸势增长，内...
2024-01-05
HBM4将是未来市场上最先进的存储器。HBM技术是一种基于3D堆叠工艺的高性能DRAM，它可以为高性能计算、人工智能、数据中心等领域提供高带宽、高容量、低延迟和低功耗的存储解决方案。本文将介绍HBM技术的原理、优势、应用和发展趋势。01. HBM技术原理： 3D堆叠实现高密度存储HBM技术是一种将多层DRAM芯片通过硅通孔（TSV）和微型凸点（uBump）连接在一起，形成一个存储堆栈（sta...
2024-01-05
Samsung Electronics Launches Industry’s First 24Gbps GDDR6 DRAM to Power Next-Generation High-End Gr
Incorporating an innovative circuit design and advanced insulating material,Samsung’s new memory will be the first GDDR6 to deliver speeds up to 24GbpsCompliant with the latest GDDR industry standa...
2024-01-05
GDDR6X: Bringing Gaming and AI to LifeMicron has created the world’s fastest discrete graphics memory solution: GDDR6X. Launched with NVIDIA on the GeForce® RTX™ 3090 and GeForce® RTX™ 3080 GPUs, G...
2024-01-05
具有高级安全功能的新3.0V 1Gb-4Gb容量2KB/4KB页第一代串口（SPI）NAND和1Gb-2Gb容量2KB页第三代并行系列NAND，ML-3产品新州圣页何塞，20日20日——全球存储存储解决方案的领导者天海存储（SkyHigh Memory Limited）向市场推出其NAND系列3.0V 1Gb-4Gb容量4KB和2KB页ML3-产品。新的Gb-4Gb ML的3 SLC 1nm...
2023-12-25
拉曼光谱仪，红外光谱仪，光纤光谱仪等检测设备，现有产品SRAM以ISSI 16Mb异步快速为主；推荐了NETSOL 最新新型存储MRAM产品，Parallel STT-MRAM 系列Netsol的 Parallel STT-MRAM 具有非易失特性和几乎无限的耐用性。对于需要快速存储和搜索数据和程序的应用程序来说，这是最理想的内存。 适用于工业设备中的代码存储、数据记录、备份和工作存储器。可...
2023-12-25
为了实现这些关键功能，助听器利用声音处理器来解释多个音频频率和级别。由助听器麦克风捕捉到的声音波被发送到处理器，将信号转换为数字信息，然后增强并放大给佩戴者。为了实现最佳听觉效果，处理器根据不同的用户情境或环境决定要增强或减弱哪些音频频率。此外，为了使处理器能够解释的声音必须以对耳朵来说无法察觉的声音延迟重新传输。 对于听觉和通信助听器中的多个程序的操作，非易失性存储器所...
2023-12-25
STT-MRAM已成为最受关注的新一代存储半导体技术之一。该产品使用了可通过Spin-Torque传递转换的两种稳定的磁化状态(Magnetic State)，使处理速度非常快，耐久性也非常出色。MRAM利用磁性来维持数据，因此即使不提供额外的电力，数据也能维持，电力消耗较少，器件的尺寸也非常小，因此可以制造出比现在更高密度的半导体。另外，由于只改变物质磁性的方向，半导体的耐久性好，储存和读...
2023-12-25
智能电表通过多种有线和无线网络传输电表数据，使电力公司能够准确地实时监控电力使用情况。电力公司通过这样的实时数据，监控使用量，检测异常情况，从而提高效率并降低成本。由于智能电表需要连续记录数据，因此需要高耐用性的内存。此外，随着OTA（Over The Air：通过无线通信进行S/W升级）功能的加入，内存的快速写入速度变得更加重要。MRAM是最理想的存储器，能够同时满足智能电表对高耐久性和快...
2023-12-25
# MRAM 晶圆Netsol的KGD 内存产品具有与单独产品相同的质量及性能特征。两种类型的产品皆在使用相同的生产和测试程序进行严格验证后获得认证。* 所有 SPIMRAM和PPIMRAM产品都以KGD选项交付。* 专门技术支持团队支持KGD客户的特定需求
2023-12-25
RAID（Redundant Array of Inexpensive Disks）是一种结合了两个或多个物理存储设备（HDD、SSD）的数据存储结构，它在被连接的系统中，被转换成识别为单个驱动器的逻辑单元（阵列）。 RAID控制卡的日志存储器存放重要数据，如日志和数据写入完成、奇偶校验写入、错误日志等。在断电的情况下，控制器查询日志内存，以了解从哪里开始恢复。MRAM中存储的主要是系统元数...
2023-12-25
Netsol的KGD 内存产品具有与单独产品相同的质量及性能特征。两种类型的产品皆在使用相同的生产和测试程序进行严格验证后获得认证。* 所有 SPIMRAM和PPIMRAM产品都以KGD选项交付。* 专门技术支持团队支持KGD客户的特定需求
2023-12-25
物联网 (IoT) 将众多智能设备利用互联网协议技术连接起来，使它们能够相互通信。MRAM持久性，结合极低的能耗模式，使物联网节点的代码和数据能够在极小的形状因素下从能源收割机或电池源操作。启动时间通常是物联网节点的一个重要考虑因素。MRAM利用原地算法（code-in-place）结构可减少所需的启动时间，由于对DRAM或SRAM的需求更少，所以减少了总体材料清单成本。从物联网的应用程序来...
2023-12-25
弹珠机和老虎机等游戏机通常使用电池供电的SRAM来存储运行时处理数据、机器状态、配置数据和重要数据（赔率、乘数、游戏单词的比赛记录）。这些数据即使在突然停电时，也必须安全存储。MRAM作为非易失性安全存储，用于游戏机的电源冲击和ESD耐受。# MRAM 晶圆Netsol的KGD 内存产品具有与单独产品相同的质量及性能特征。两种类型的产品皆在使用相同的生产和测试程序进行严格验证后获得认证。* ...
2023-12-25
汽车通信与连接性：MRAM的快速响应与稳定性MRAM具有近乎无限的耐久性及高可靠性，是能够满足电子应用程序中这种市场需求的非易失性存储器，最为理想。MRAM的主要优势如下· 近乎无限的耐用性（100兆次的写入次数）·长期数据保存（10 年）·快速写入时间·高可靠性·高放射线耐性# Serial STT-MRAM 串口容量 : 1Mb、2Mb、4Mb、8Mb、16Mb、32Mb 电源供应 ：...
2023-12-25
品牌的磁性随机访问存储器（MRAM）与其他存储技术相比具有许多独特的特点和优势。以下是MRAM与其他存储技术（如闪存、DRAM、NVRAM等）进行比较的一些方面：∎ 更快的写入速度：MRAM芯片比FRAM芯片具有更快的写入速度。MRAM芯片可以实现单个字节的写入，而FRAM芯片则需要写入整个数据块。这使得MRAM芯片在存储大量数据时更加高效。更低的功耗：MRAM芯片比FRAM芯片具有更低的功...
2023-12-25
MRAM是一种新型非易失存储器，采用电子的自旋属性表征数据信息的存储及传输，具备高速读写、低功耗、高密度、耐擦写、宽温区和抗辐照等优势，被广泛认为是下一代非易失存储芯片的理想选择。MRAM具能够将存储器的密度与SRAM的速度结合在一起，同时始终保持非易失性和高能效。在汽车应用上面，Netslo MRAM非易失性存储器几乎可以在任何汽车系统中提高性能并降低成本，保护有价值的数据并降低成本MRA...
2023-12-22
Flash Memory Summit 2024Event Duration: Event duration Tuesday, Aug, 6, 2024 - Thursday, Aug, 8, 2024Where: Where San Francisco, California, United StatesThe memory industry's leading event, Flash ...
2023-12-22
STT-MRAMSTT-MRAM (also called STT-RAM or sometimes ST-MRAM and ST-RAM) is an advanced type of MRAM devices. STT-MRAM enables higher densities, low power consumption and reduced cost compared to reg...
2023-12-22
MRAM (Magnetic RAM) is a memory technology that uses electron spin to store information (an MRAM device is a Spintronics device). MRAM has the potential to become a universal memory - able to combi...
2023-12-22
NETSOL串行MRAM产品非常适合需要快速频繁地存储和检索数据和程序的应用程序，因为STT-MRAM具有非易失性、几乎无限的耐久性和快速写入特性。STT-MRAM它具有SPl总线接口、XIP（就地执行）功能和基于硬件/软件的数据保护机制。SPl（串行外围接口）是一个带有命令、地址和数据信号的同步串行通信接口。它比并行接口需要更少的引脚数，并且易于在系统上配置。该产品的密度范围从1Mbit到...
2023-12-22
华大电子推出的CIU32L0超低功耗安全MCU产品线是基于ARM 32位内核，最高频率可达48MHz，具有超低功耗、高集成度、高可靠性、高安全的特点。内部集成LCD、ADC、VREFBUF、低功耗COMP、多种定时器、多个USART/I2C/SPI等丰富的外设资源，同时提供了SM4、AES、TRNG、PUF等信息安全外设，通过商密二级及EAL4+认证。华大电子华大电子是专业从事安全芯片开发的...
2023-12-14
12月12日，富士通公告称，将以6849亿日元（约合人民币345亿元）价格将其旗下的芯片封装子公司Shinko Electric Industries（新光电气）出售给日本投资公司JIC牵头的财团，该财团包括大日本印刷（Dai Nippon Printing）和三井化学。与此同时，新光电气也表示支持，并建议股东接受该要约。JIC表示，在获得日本和海外必要的监管批准后，将在2024年8月下旬对...
2023-12-14
近期媒体报道，新创晶圆代工厂Raapidus董事长东哲郎在SEMICON Japan 2023演讲时表示，相信日本能够在超先进晶圆制造技术竞赛上，迎头赶上领先者台积电与英特尔等，从此缩短多达20年的落后差距。东哲郎表示，Rapidus 北海道建厂计划一定会成功，并且大约在 2027~2028 年期间，相关制程技术将发生改变。因为，新兴的晶体管架构GAA（全环绕栅极排列）将取代目前主流的Fin...
2023-12-14
随着AI、大数据等技术不断普及，业界对DRAM芯片要求持续上升，为提升性能与容量，存储器大厂纷纷瞄准先进制程技术。近期，美光对外透露了先进DRAM技术进展。日媒报道，12月13日美光日本法人高层Joshua Lee对外表示，美光日本广岛工厂将在2025年生产最先进存储器1γ DRAM。Joshua Lee指出，美光将成为第一家将EUV（极紫外光）光刻机导入日本的半导体企业。此外，美光还计划在...
2023-12-14
News HighlightsStarts supplying 16 GB mobile DRAM package to global smartphone makersLPDDR5T to be adopted in the latest smartphones along with MediaTek Dimensity 9300 mobile processor“Company to c...
2023-12-14
News Highlights9.6Gbps product verified to be compatible with Qualcomm’s new Snapdragon mobile processorWith validation with global major partners completed, SK hynix to provide LPDDR5T to global s...
2023-12-14
2023-12-13
就SWM166开发板来讲，它的程序存储和显示素材的存储是分开来进行的，因此可以这样想见其素材是被存放到存储芯片W25Q125中。要对素材进行下载，需先下载工具软件Synwit_IMG_Tool。下载软件：由于该软件比较小，故无需进行安装，其界面如图1所示。图1 软件界面为了进行下载测试，可先利用厂家的的素材。在下载前，需使用USB转TTL模块来连接开发板的UART2。随后需分为二步来来下载素...
2023-12-13
我们从官方提供的资料分享链接，可以获取到关于该屏的SDK包。这里再附上链接。 链接：https://pan.baidu.com/s/1IlBS3D6pl979YUKh853fRA 提取码：nicg 资料提供的比较全面，还包含了诸多基础库工程。搭建基于Keil开发环境，首先需要安装pack支持包。 pack支持包可以在华芯微特的百度云盘“01.SYNWI...
2023-12-13
一，实验目的首先感谢论坛提供此次测评的机会，本次实验目的是通过官方资料了解产品硬件资源，在官方例程基础上修改部分代码在辅助功能菜单里，通过编码器自由设置预约时间。二，硬件资源SWM166 系列 32 位 MCU（以下简称 SWM166）内嵌 ARM® Cortex®-M0 内核，可应用于工业控制、电机控制、白色家电等多种领域。SWM166 支持片上包含精度为 1%以内的 12M 时钟及 PL...
2023-12-13
（1）支持ISP下载和SWD下载两种模式，通过上位机软件可选。（2）电源接口支持USB供电和适配器供电（5-12V）。<span]（3）适配器供电时，如果误操作接入了超过12V的电源，烧录器有过压断电保护功能。（4）提供三色指示灯用来指示烧录状态，绿色表示成功，红色表示失败，蓝色表示烧录中。<span]（5）0.96寸128*64的OLED显示屏用来显示当前烧录状态，烧录成功次数、失败次数自...
2023-12-13
一、下载烧写种类1、PC 端下载工具软件： SYNWIT-PRG_Vx.x.x.exe2、PC 端 Userboot 功能应用下载工具： SWMProg.exe – x.x.x3、官方离线烧写器ZB103 -- SWM320RET7 固件，一拖一烧写方式。4、第三方离线烧写器芯圆 型号 ST268E0https://item.taobao.com/item.htm ... amp;id=61...
2023-12-13
12月存储现货市场活跃度有限，本周存储成品端涨幅放缓，渠道行情仍在持续倒挂，市场整体在陆续交货及年底结算中，等待新一轮备货需求的出现。由于目前NAND Wafer资源价格高昂，推涨部分嵌入式及行业产品价格，而靠近零售端的渠道市场需要时间消化库存，存储现货行情整体倒挂加剧，市场购买力偏弱。在倒挂行情和时节因素的影响下，短期内市场对存储涨价接受度不足。近期存储成品端涨幅有所放缓，部分原厂也放缓了...
2023-12-13
128GB CXL DRAM based on advanced CXL 2.0 interface to be mass produced this year, accelerating commercialization of next-generation memory solutionsSamsung will continue collaborating with global d...
2023-12-11
amsung's newest DRAM will optimize next-generation computing, including artificial intelligence applications, with greater power efficiency and productivitySamsung Electronics, a world leader in ad...
2023-12-11
Samsung’s latest 32Gbps GDDR7 to further expand capabilities in applications for AI, HPC and automotive vehiclesEnhancements in GDDR7 include 1.4 times boost in performance and 20% improvement in p...
2023-12-11
Samsung Starts Mass Production of Automotive UFS 3.1 Memory Solution With Industry’s Lowest Power Co
New UFS 3.1 is optimized for IVI systems and consumes 33% less energy, providing added benefits to future automotive applicationsSamsung to build out full UFS 3.1 lineup to meet various customer ne...
2023-12-11
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